SI3434DV-T1-E3

new-10%

Manufacturer part number:SI3434DV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 4.6A 6-TSOP

Case Package:SOT-23

Datasheet:SI3434DV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	34mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1.14W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.14W
Turn On Delay Time	21 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	34m Ω @ 6.1A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 1mA (Min)
Current - Continuous Drain (Id) @ 25°C	4.6A Ta
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	4.6A
Threshold Voltage	600mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Nominal Vgs	600 mV
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free