Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRF7478TRPBF

IRF7478TRPBF

IRF7478TRPBF

Infineon Technologies

IRF7478TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7478TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 26MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 4.2A
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 7.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26m Ω @ 4.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V
Rise Time 2.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 4.2A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
IRF7478TRPBF Product Details

IRF7478TRPBF Description


The IRF7478TRPBF is a HEXFET? single N-channel Power MOSFET offering a low gate-to-drain charge to reduce switching losses. The Infineon IRF7478TRPBF is suitable for high-frequency DC-to-DC converters. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor IRF7478TRPBF is in the SOIC-8 package with 2.5W power dissipation.



IRF7478TRPBF Features


  • Low Gate to Drain Charge to Reduce Switching Losses

  • Fully Characterized Capacitance Including Effective COSS to Simplify Design

  • Fully Characterized Avalanche Voltage and Current

  • Lead-Free

  • Drain-to-Source Breakdown Voltage: 60v



IRF7478TRPBF Applications


  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News