SI5855CDC-T1-E3

new-10%

Manufacturer part number:SI5855CDC-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 3.7A 1206-8

Case Package:SOT-23

Datasheet:SI5855CDC-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Weight	84.99187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	LITTLE FOOT®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1.3W Ta 2.8W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Turn On Delay Time	11 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	144m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	276pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.7A Tc
Gate Charge (Qg) (Max) @ Vgs	6.8nC @ 5V
Rise Time	34ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	34 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	-3.7A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	2.5A
Drain to Source Breakdown Voltage	-20V
FET Feature	Schottky Diode (Isolated)
Height	1.1mm
Length	3.05mm
Width	1.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant