IRF7492TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF7492TRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Supplier Device Package
8-SO
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
79MOhm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Power Dissipation
2.5W
Turn On Delay Time
15 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
79mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1820pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3.7A Ta
Gate Charge (Qg) (Max) @ Vgs
59nC @ 10V
Rise Time
13ns
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
3.7A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Input Capacitance
1.82nF
Drain to Source Resistance
79mOhm
Rds On Max
79 mΩ
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.448145
$0.448145
10
$0.422778
$4.22778
100
$0.398847
$39.8847
500
$0.376271
$188.1355
1000
$0.354972
$354.972
IRF7492TRPBF Product Details
IRF7492TRPBF Description
IRF7492TRPBF belongs to the family of power MOSFETs provided by Infineon Technologies. It is able to minimize switching losses based on low gate-to-drain charges. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including high-frequency DC?DC converters and more.