STU60N3LH5

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Manufacturer part number:STU60N3LH5

Manufacturer:STMicroelectronics

Description:STU60N3LH5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STU60N3LH5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™ V
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STU60N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	60W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	60W
Case Connection	DRAIN
Turn On Delay Time	6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.4m Ω @ 24A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1620pF @ 25V
Current - Continuous Drain (Id) @ 25°C	48A Tc
Gate Charge (Qg) (Max) @ Vgs	8.8nC @ 5V
Rise Time	33ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.2 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	24A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	22V
Drain Current-Max (Abs) (ID)	48A
Drain to Source Breakdown Voltage	30V
Height	6.9mm
Length	6.6mm
Width	2.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant