IRF7665S2TR1PBF

new-10%

Manufacturer part number:IRF7665S2TR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 4.1A DFET SB

Case Package:SOT-23

Datasheet:IRF7665S2TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SB
Number of Pins	4
Supplier Device Package	DIRECTFET SB
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	62MOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.4W Ta 30W Tc
Element Configuration	Single
Power Dissipation	2.4W
Turn On Delay Time	3.8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	62mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id	5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	515pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.1A Ta 14.4A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	6.4ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	3.6 ns
Turn-Off Delay Time	7.1 ns
Continuous Drain Current (ID)	14.4mA
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	515pF
Drain to Source Resistance	51mOhm
Rds On Max	62 mΩ
Nominal Vgs	4 V
Height	508μm
Length	4.826mm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free