IRF7700

new-10%

Manufacturer part number:IRF7700

Manufacturer:Infineon Technologies

Description:IRF7700 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7700 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.5W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15m Ω @ 8.6A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 15V
Current - Continuous Drain (Id) @ 25°C	8.6A Tc
Gate Charge (Qg) (Max) @ Vgs	89nC @ 5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
JEDEC-95 Code	MO-153AA
Drain Current-Max (Abs) (ID)	8.6A
Drain-source On Resistance-Max	0.015Ohm
Pulsed Drain Current-Max (IDM)	68A
DS Breakdown Voltage-Min	20V
RoHS Status	Non-RoHS Compliant