IPS65R600E6AKMA1

new-10%

Manufacturer part number:IPS65R600E6AKMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V TO-251-3

Case Package:SOT-23

Datasheet:IPS65R600E6AKMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2015
Series	CoolMOS™ E6
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	63W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 210μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 100V
Current - Continuous Drain (Id) @ 25°C	7.3A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	7.3A
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.6Ohm
Pulsed Drain Current-Max (IDM)	18A
Avalanche Energy Rating (Eas)	142 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead