IRF7701 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7701 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173, 4.40mm Width)
Surface Mount
YES
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2007
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Configuration
Single
Power Dissipation-Max
1.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
11m Ω @ 10A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5050pF @ 10V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
100nC @ 4.5V
Drain to Source Voltage (Vdss)
12V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Drain Current-Max (Abs) (ID)
10A
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$1.36130
$136.13
IRF7701 Product Details
IRF7701 Description
International Rectifier's HEXFET? power MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This benefit, along with the ruggedized device design for which International Rectifier is renowned, gives the designer access to a very effective and dependable tool for load and battery management.
The footprint area of the TSSOP-8 package is 45% less than that of the SO-8 standard. In situations where printed circuit board space is at a premium, the TSSOP-8 is the perfect device. The TSSOP-8 will be able to readily fit into extremely thin application contexts like portable electronics and PCMCIA cards thanks to its low profile (1.1mm).