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IRFS7530PBF

IRFS7530PBF

IRFS7530PBF

Infineon Technologies

IRFS7530PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFS7530PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2013
Series HEXFET®, StrongIRFET™
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 375W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation375W
Case Connection DRAIN
Turn On Delay Time52 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13703pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 411nC @ 10V
Rise Time141ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 104 ns
Turn-Off Delay Time 172 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 3.7V
Gate to Source Voltage (Vgs) 3.7V
Drain-source On Resistance-Max 0.002Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 760A
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4942 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.54000$5.54
10$4.98100$49.81
100$4.14000$414
500$3.41108$1705.54

IRFS7530PBF Product Details

IRFS7530PBF Description


IRFS7530PBFis Improved Gate.Avalanche and Dynamic dVidt Ruggedness ,Fully Characterized Capacitanceand AvalancheSOA ,Enhanced body diode dV/dt and dl/dt Capability and Lead-Free,RoHS Compliant.

IRFS7530PBF Application


Brushed Motor drive applications BLDC Motor drive applications

Battery powered circuits

Half-bridge and full-bridge topologies

Synchronous rectifierapplications

Resonant mode power supplies

OR-ing and redundant power switches

DC/DC and AC/DC converters

DC/AC Inverters

IRFS7530PBF Features


IImproved Gate.

Avalanche and Dynamic dVidt Ruggedness

Fully Characterized Capacitanceand AvalancheSOA

Enhanced body diode dV/dt and dl/dt Capability

Lead-Free,RoHS Compliant


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