IRFS7530PBF

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IRFS7530PBF

Manufacturer part number:IRFS7530PBF

Manufacturer:Infineon Technologies

Description:IRFS7530PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFS7530PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	HEXFET®, StrongIRFET™
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	375W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	375W
Case Connection	DRAIN
Turn On Delay Time	52 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	13703pF @ 25V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	411nC @ 10V
Rise Time	141ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	104 ns
Turn-Off Delay Time	172 ns
Continuous Drain Current (ID)	195A
Threshold Voltage	3.7V
Gate to Source Voltage (Vgs)	3.7V
Drain-source On Resistance-Max	0.002Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	760A
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free