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IRF7703TRPBF

IRF7703TRPBF

IRF7703TRPBF

Infineon Technologies

MOSFET P-CH 40V 6A 8-TSSOP

SOT-23

IRF7703TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-TSSOP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 28MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.5W Ta
Power Dissipation 1.5W
Turn On Delay Time 43 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 28mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5220pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 62nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 155 ns
Continuous Drain Current (ID) -6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
Dual Supply Voltage -40V
Input Capacitance 5.22nF
Drain to Source Resistance 45mOhm
Rds On Max 28 mΩ
Nominal Vgs -3 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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