IRF7769L2TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7769L2TR1PBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Number of Pins
11
Supplier Device Package
DIRECTFET L8
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
3.5MOhm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
3.3W Ta 125W Tc
Element Configuration
Single
Power Dissipation
125W
Turn On Delay Time
44 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.5mOhm @ 74A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
11560pF @ 25V
Current - Continuous Drain (Id) @ 25°C
375A Tc
Gate Charge (Qg) (Max) @ Vgs
300nC @ 10V
Rise Time
32ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
41 ns
Turn-Off Delay Time
92 ns
Continuous Drain Current (ID)
20A
Threshold Voltage
2.7V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Input Capacitance
11.56nF
Drain to Source Resistance
2.8mOhm
Rds On Max
3.5 mΩ
Nominal Vgs
2.7 V
Height
508μm
Length
9.144mm
Width
7.1mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRF7769L2TR1PBF Product Details
IRF7769L2TR1PBF Description
In order to achieve the lowest on-state resistance in a package with a footprint smaller than a D2PAK and only a 0.7 mm profile, the IRF7769L2TR/TR1PbF blends the most recent HEXFET? Power MOSFET Silicon technology with the most modern DirectFETTM packaging. When application note AN-1035 detailing the manufacturing processes and procedures is adhered to, the DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infra-red, or convection soldering techniques. Dual-sided cooling is possible with the DirectFET package, which maximizes heat transmission in power systems. Applications requiring synchronous rectification and high frequency switching are best served by the IRF7769L2TR/TR1PbF. Low temperatures are made possible by the device's reduced overall losses and high level of thermal performance.