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IRF7769L2TR1PBF

IRF7769L2TR1PBF

IRF7769L2TR1PBF

Infineon Technologies

IRF7769L2TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7769L2TR1PBF Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric L8
Number of Pins 11
Supplier Device Package DIRECTFET L8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.5MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 3.3W Ta 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 44 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5mOhm @ 74A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11560pF @ 25V
Current - Continuous Drain (Id) @ 25°C 375A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 32ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 92 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 2.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 11.56nF
Drain to Source Resistance 2.8mOhm
Rds On Max 3.5 mΩ
Nominal Vgs 2.7 V
Height 508μm
Length 9.144mm
Width 7.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
IRF7769L2TR1PBF Product Details

IRF7769L2TR1PBF Description


In order to achieve the lowest on-state resistance in a package with a footprint smaller than a D2PAK and only a 0.7 mm profile, the IRF7769L2TR/TR1PbF blends the most recent HEXFET? Power MOSFET Silicon technology with the most modern DirectFETTM packaging. When application note AN-1035 detailing the manufacturing processes and procedures is adhered to, the DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infra-red, or convection soldering techniques. Dual-sided cooling is possible with the DirectFET package, which maximizes heat transmission in power systems. Applications requiring synchronous rectification and high frequency switching are best served by the IRF7769L2TR/TR1PbF. Low temperatures are made possible by the device's reduced overall losses and high level of thermal performance.



IRF7769L2TR1PBF Features


  • RoHS Compliant, Halogen Free

  • Lead-Free (Qualified up to 260??C Reflow)

  • Ideal for High Performance Isolated Converter   

  • Primary Switch Socket

  • Optimized for Synchronous Rectification

  • Low Conduction Losses

  • High Cdv/dt Immunity

  • Low Profile (<0.7mm)

  • Dual Sided Cooling Compatible 

  • Compatible with existing Surface Mount Techniques 

  • Industrial Qualified



IRF7769L2TR1PBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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