IRF7807VD1PBF

new-10%

Manufacturer part number:IRF7807VD1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 8.3A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7807VD1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	FETKY™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	25MOhm
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	8.3A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Power Dissipation	1.6W
Turn On Delay Time	6.3 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	25m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	8.3A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Rise Time	1.2ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V
Vgs (Max)	±20V
Fall Time (Typ)	2.2 ns
Turn-Off Delay Time	1.1 ns
Continuous Drain Current (ID)	8.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
FET Feature	Schottky Diode (Isolated)
Nominal Vgs	20 V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free