IRFD9010

new-10%

Manufacturer part number:IRFD9010

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 50V 1.1A 4-DIP

Case Package:SOT-23

Datasheet:IRFD9010 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Weight	639.990485mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN LEAD
Voltage - Rated DC	-50V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Current Rating	-1.1A
Pin Count	4
JESD-30 Code	R-XDIP-T3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	6.1 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	500m Ω @ 580mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	240pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.1A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Rise Time	47ns
Drain to Source Voltage (Vdss)	50V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	39 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	1.1A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.5Ohm
Drain to Source Breakdown Voltage	-50V
Height	3.37mm
Length	5mm
Width	6.29mm
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead