IRF7807Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7807Z Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2005
Series
HEXFET®
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
13.8m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
770pF @ 15V
Current - Continuous Drain (Id) @ 25°C
11A Ta
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
JEDEC-95 Code
MS-012AA
Drain Current-Max (Abs) (ID)
11A
Drain-source On Resistance-Max
0.0138Ohm
DS Breakdown Voltage-Min
30V
RoHS Status
Non-RoHS Compliant
In-Stock:2179 items
IRF7807Z Product Details
IRF7807Z Description
IRF7807Z is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 40V. The operating temperature of the IRF7807Z is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF7807Z has 8 pins and it is available in Tube packaging way.
IRF7807Z Features
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
100% Tested for RG
IRF7807Z Applications
Control FET for Notebook Processor Power
Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems
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