IRFB9N65A

new-10%

Manufacturer part number:IRFB9N65A

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 650V 8.5A TO-220AB

Case Package:SOT-23

Datasheet:IRFB9N65A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	650V
Technology	MOSFET (Metal Oxide)
Current Rating	8.5A
Number of Channels	1
Power Dissipation-Max	167W Tc
Element Configuration	Single
Power Dissipation	167W
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	930mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1417pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8.5A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	8.5A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	650V
Input Capacitance	1.417nF
Drain to Source Resistance	920mOhm
Rds On Max	930 mΩ
Height	9.01mm
Length	10.41mm
Width	4.7mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead