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IRF7821PBF

  • IRF7821PBF
  • IRF7821PBF

IRF7821PBF

IRF7821PBF

Infineon Technologies

IRF7821PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7821PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~155°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.1m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13.6A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
IRF7821PBF Product Details

IRF7821PBF Description


IRF7821PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7821PBF is -55??C~155??C TJ and its maximum power dissipation is 2.5W Ta. IRF7821PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7821PBF is 30V.



IRF7821PBF Features


  • Very Low RDS(on) at 4.5V VGS

  • Low Gate Charge

  • Fully Characterized Avalanche Voltage and Current



IRF7821PBF Applications


  • High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems.

  • Lead-Free


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