NVJS3151PT1G

new-10%

Manufacturer part number:NVJS3151PT1G

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 60m Ω @ 3.3A, 4.5V ±12V 850pF @ 12V 8.6nC @ 4.5V 12V 6-TSSOP, SC-88, SOT-363

Case Package:SOT-23

Datasheet:NVJS3151PT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
JESD-30 Code	R-PDSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max	625mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 12V
Current - Continuous Drain (Id) @ 25°C	2.7A Ta
Gate Charge (Qg) (Max) @ Vgs	8.6nC @ 4.5V
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Drain Current-Max (Abs) (ID)	2.7A
Drain-source On Resistance-Max	0.06Ohm
DS Breakdown Voltage-Min	12V
RoHS Status	ROHS3 Compliant