IRF7822PBF

new-10%

Manufacturer part number:IRF7822PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 18A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7822PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	18A
Number of Elements	1
Row Spacing	6.3 mm
Power Dissipation-Max	3.1W Ta
Power Dissipation	3.1W
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5500pF @ 16V
Current - Continuous Drain (Id) @ 25°C	18A Ta
Gate Charge (Qg) (Max) @ Vgs	60nC @ 5V
Rise Time	5.5ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V
Vgs (Max)	±12V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	18A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Input Capacitance	5.5nF
Drain to Source Resistance	6.5mOhm
Rds On Max	6.5 mΩ
Nominal Vgs	1 V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free