FQB17P10TM

new-10%

Manufacturer part number:FQB17P10TM

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 100V 16.5A D2PAK

Case Package:SOT-23

Datasheet:FQB17P10TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK (TO-263AB)
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	-100V
Technology	MOSFET (Metal Oxide)
Current Rating	-16.5A
Number of Elements	1
Power Dissipation-Max	3.75W Ta 100W Tc
Element Configuration	Single
Power Dissipation	3.75W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	190mOhm @ 8.25A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16.5A Tc
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Rise Time	200ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	16.5A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	-100V
Input Capacitance	1.1nF
Drain to Source Resistance	190mOhm
Rds On Max	190 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free