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IRF7822TRPBF

IRF7822TRPBF

IRF7822TRPBF

Infineon Technologies

MOSFET N-CH 30V 18A 8-SOIC

SOT-23

IRF7822TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 6.5MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 18A
Number of Elements 1
Power Dissipation-Max 3.1W Ta
Power Dissipation 3.1W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 16V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V
Rise Time 5.5ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Input Capacitance 5.5nF
Drain to Source Resistance 6.5mOhm
Rds On Max 6.5 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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