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IRF7904PBF

IRF7904PBF

IRF7904PBF

Infineon Technologies

IRF7904PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

IRF7904PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 30V
Max Power Dissipation 2W
Current Rating 7.6A
Base Part Number IRF7904PBF
Number of Elements 2
Element Configuration Dual
Power Dissipation 2W
Power - Max 1.4W 2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 16.2m Ω @ 7.6A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.6A 11A
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Continuous Drain Current (ID) 11A
Threshold Voltage 2.25V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Recovery Time 17 ns
FET Feature Logic Level Gate
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Exempt
IRF7904PBF Product Details

IRF7904PBF         Description

 

HEXFET is trademark of power MOSFET developed by International Rectifier.  As shown silicon oxide layer between gate and source regions can be punctured by exceeding its dielectric strength.

 

IRF7904PBF                 Applications


 Dual SO-8 MOSFET for POL

Converters in Notebook Computers, Servers,

Graphics Cards, Game Consoles

and Set-Top Box

 

IRF7904PBF                      Features    


 Very Low RDS(on) at 4.5V VGS

 Low Gate Charge

 Fully Characterized Avalanche Voltage

 and Current

 20V VGS Max. Gate Rating

 Improved Body Diode Reverse Recovery

 100% Tested for RG

 Lead-Free

 




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