IRF7904PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website
SOT-23
IRF7904PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2006
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
30V
Max Power Dissipation
2W
Current Rating
7.6A
Base Part Number
IRF7904PBF
Number of Elements
2
Element Configuration
Dual
Power Dissipation
2W
Power - Max
1.4W 2W
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
16.2m Ω @ 7.6A, 10V
Vgs(th) (Max) @ Id
2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds
910pF @ 15V
Current - Continuous Drain (Id) @ 25°C
7.6A 11A
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V
Continuous Drain Current (ID)
11A
Threshold Voltage
2.25V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Recovery Time
17 ns
FET Feature
Logic Level Gate
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Exempt
IRF7904PBF Product Details
IRF7904PBF Description
HEXFET is trademark of power MOSFET developed by International Rectifier. As shown silicon oxide layer between gate and source regions can be punctured by exceeding its dielectric strength.