FDS8958A-F085

new-10%

Manufacturer part number:FDS8958A-F085

Manufacturer:ON Semiconductor

Description:MOSFET N/P-CH 30V 7A/5A 8SOIC

Case Package:SOT-23

Datasheet:FDS8958A-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	Automotive, AEC-Q101, PowerTrench®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Subcategory	Other Transistors
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G8
Qualification Status	Not Qualified
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	900mW
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	575pF @ 15V
Current - Continuous Drain (Id) @ 25°C	7A 5A
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Drain to Source Voltage (Vdss)	30V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.028Ohm
Pulsed Drain Current-Max (IDM)	20A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	54 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	2W
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant