IRF7907TRPBF             Description

  These HEXFET power MOSFET are designed for automotive applications and are packaged in dual SO-8 packages that use the latest technology to achieve extremely low on-resistance per silicon area. Other features of these automotive certified HEXFET power MOSFET include 150 °C junction operating temperature, fast switching speed and improved repeated avalanche ratings. The combination of these advantages makes the design an extremely efficient and reliable device for automotive and a variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capabilities, making it an ideal choice for a variety of power applications. This dual surface mount SO-8 can greatly reduce circuit board space, and can also be used in magnetic tapes and reels.

IRF7907TRPBF             Features

· Advanced Planar Technology

· Ultra Low On-Resistance

· Logic Level Gate Drive

· Dual N and P Channel MOSFET

· Surface Mount

· Available in Tape & Reel

· 150°C Operating Temperature

· Lead-Free, RoHS Compliant

· Automotive Qualified

IRF7907TRPBF                 Applications

The combination of these advantages makes the design an extremely efficient and reliable device for automotive and a variety of other applications.