SIA910EDJ-T1-GE3

new-10%

Manufacturer part number:SIA910EDJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:Dual N-Channel 12 V 28 mOhm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L

Case Package:SOT-23

Datasheet:SIA910EDJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	28MOhm
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Powers
Max Power Dissipation	7.8W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SIA910E
Pin Count	6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 5.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	455pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	16nC @ 8V
Rise Time	12ns
Drain to Source Voltage (Vdss)	12V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	4.5A
Threshold Voltage	400mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	400 mV
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free