IRF830PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF830PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Series
HEXFET®
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Current Rating
4.5A
Power Dissipation-Max
74W Tc
Power Dissipation
74W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.5Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
610pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.5A Tc
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
4.5A
Gate to Source Voltage (Vgs)
20V
Drain to Source Resistance
1.5Ohm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.38000
$1.38
50
$1.10540
$55.27
100
$0.96720
$96.72
500
$0.75010
$375.05
1,000
$0.59219
$0.59219
2,500
$0.55271
$1.10542
5,000
$0.52507
$2.62535
IRF830PBF Product Details
IRF830PBF Description
IRF830PBF is a type of power MOSFET provided by Infineon Technologies which is optimized for fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. It is available in the TO-220AB package for use in commercial-industrial applications at power dissipation levels to approximately 50 W. It is widely accepted throughout the industry due to its low thermal resistance and low package cost.