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IRF830PBF

IRF830PBF

IRF830PBF

Infineon Technologies

IRF830PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF830PBF Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature-55°C~150°C TJ
PackagingBulk
Series HEXFET®
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating4.5A
Power Dissipation-Max 74W Tc
Power Dissipation74W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Resistance 1.5Ohm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5227 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.38000$1.38
50$1.10540$55.27
100$0.96720$96.72
500$0.75010$375.05

IRF830PBF Product Details

IRF830PBF Description


IRF830PBF is a type of power MOSFET provided by Infineon Technologies which is optimized for fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. It is available in the TO-220AB package for use in commercial-industrial applications at power dissipation levels to approximately 50 W. It is widely accepted throughout the industry due to its low thermal resistance and low package cost.



IRF830PBF Features


  • Fast switching

  • Ruggedized device design

  • Low on-resistance

  • cost-effectiveness

  • Available in the TO-220AB package



IRF830PBF Applications


  • Commercial-industrial applications


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