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IRFR5305TRPBF

  • IRFR5305TRPBF
  • IRFR5305TRPBF

IRFR5305TRPBF

IRFR5305TRPBF

Infineon Technologies

IRFR5305TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFR5305TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2000
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 65mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -55V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -31A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 66ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 63 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) -31A
Threshold Voltage -4V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain to Source Breakdown Voltage -55V
Dual Supply Voltage -55V
Avalanche Energy Rating (Eas) 280 mJ
Recovery Time 110 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs -4 V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
IRFR5305TRPBF Product Details

IRFR5305TRPBF Description



The fifth generation HEXFET of International Rectifier Company adopts advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with extremely efficient and reliable devices for use in a variety of applications. D-Pak is designed for surface mounting using gas phase, infrared or wave soldering techniques. The direct guide version (IRFU series) is suitable for through-hole installation applications. In a typical surface mount application, the power consumption can be up to 1.5 watts.


IRFR5305TRPBF   Features


Ultra Low On-Resistance

Surface Mount (IRFR5305)

Straight Lead (IRFU5305)

Advanced Process Technology

Fast Switching

Fully Avalanche Rated

Lead-Free

 


 

IRFR5305TRPBF  Applications


through-hole installation applications

 

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