IRFB3004GPBF

new-10%

Manufacturer part number:IRFB3004GPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 195A TO220AB

Case Package:SOT-23

Datasheet:IRFB3004GPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	380W Tc
Element Configuration	Single
Power Dissipation	380W
Turn On Delay Time	23 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.75mOhm @ 195A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	220ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	130 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	195A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Input Capacitance	9.2nF
Drain to Source Resistance	1.75mOhm
Rds On Max	1.75 mΩ
Height	16.51mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
RoHS Status	RoHS Compliant