FDD1600N10ALZD

new-10%

Manufacturer part number:FDD1600N10ALZD

Manufacturer:ON Semiconductor

Description:BOOSTFET N CH 100V 6.8A TO252-5L

Case Package:SOT-23

Datasheet:FDD1600N10ALZD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 6 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-5, DPak (4 Leads + Tab), TO-252AD
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G4
Number of Elements	1
Power Dissipation-Max	14.9W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	160m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	225pF @ 50V
Current - Continuous Drain (Id) @ 25°C	6.8A Tc
Gate Charge (Qg) (Max) @ Vgs	3.61nC @ 10V
Rise Time	2ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	6.8A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.16Ohm
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	5.08 mJ
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	RoHS Compliant