IRFB4310GPBF

new-10%

Manufacturer part number:IRFB4310GPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 130A TO-220AB

Case Package:SOT-23

Datasheet:IRFB4310GPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Power Dissipation	300W
Turn On Delay Time	26 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7670pF @ 50V
Current - Continuous Drain (Id) @ 25°C	130A Tc
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Rise Time	110ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	78 ns
Turn-Off Delay Time	68 ns
Continuous Drain Current (ID)	130A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	7.67nF
Drain to Source Resistance	7mOhm
Rds On Max	7 mΩ
Nominal Vgs	4 V
Height	16.51mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	RoHS Compliant
Lead Free	Lead Free