IRFH5053TR2PBF

new-10%

Manufacturer part number:IRFH5053TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 9.3A PQFN56

Case Package:SOT-23

Datasheet:IRFH5053TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Supplier Device Package	PQFN (5x6) Single Die
Packaging	Cut Tape (CT)
Published	2008
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.1W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	3.1W
Turn On Delay Time	8.6 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	18mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id	4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1510pF @ 50V
Current - Continuous Drain (Id) @ 25°C	9.3A Ta 46A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Rise Time	7.5ns
Drain to Source Voltage (Vdss)	100V
Fall Time (Typ)	4.1 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	9.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	1.51nF
Drain to Source Resistance	18mOhm
Rds On Max	18 mΩ
Height	939.8μm
Length	5.9944mm
Width	5mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free