FQA19N20C Description
These N-channel enhanced power field effect transistors are produced using Fairchild's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are very suitable for efficient switching mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.
FQA19N20C Features
? 21.8A, 200V, RDS(on) = 0.17? @VGS = 10 V
? Low gate charge ( typical 40.5 nC)
? Low Crss ( typical 85 pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability
FQA19N20C Applications
switching mode power supplies
active power factor correction
electronic lamp ballasts
