FQA19N20C   Description

  These N-channel enhanced power field effect transistors are produced using Fairchild's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are very suitable for efficient switching mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.

FQA19N20C   Features

? 21.8A, 200V, RDS(on) = 0.17? @VGS = 10 V

? Low gate charge ( typical 40.5 nC)

? Low Crss ( typical 85 pF)

? Fast switching

? 100% avalanche tested

? Improved dv/dt capability

FQA19N20C    Applications

 switching mode power supplies

active power factor correction

electronic lamp ballasts