IRFH5106TRPBF

new-10%

Manufacturer part number:IRFH5106TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 21A 8-PQFN

Case Package:SOT-23

Datasheet:IRFH5106TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
JESD-30 Code	R-PDSO-N5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.6W Ta 114W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	114W
Case Connection	DRAIN
Turn On Delay Time	8.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3090pF @ 25V
Current - Continuous Drain (Id) @ 25°C	21A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	9.5 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0056Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	96 mJ
Nominal Vgs	2 V
Height	838.2μm
Length	5.9944mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free