FDP8870 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDP8870 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Through Hole
Package / Case
TO-220AB
Number of Pins
3
Weight
1.8g
Packaging
Tube
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
4.1MOhm
Terminal Finish
Tin (Sn)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Max Power Dissipation
160W
Current Rating
160A
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
Case Connection
DRAIN
Turn On Delay Time
11 ns
Transistor Application
SWITCHING
Rise Time
105ns
Drain to Source Voltage (Vdss)
30V
Polarity/Channel Type
N-CHANNEL
Fall Time (Typ)
46 ns
Turn-Off Delay Time
70 ns
Continuous Drain Current (ID)
156A
Threshold Voltage
2.5V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Input Capacitance
5.2nF
FET Technology
METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance
4.1mOhm
Rds On Max
4.1 mΩ
Nominal Vgs
2.5 V
Height
9.4mm
Length
10.67mm
Width
4.83mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.98000
$1.98
10
$1.78900
$17.89
FDP8870 Product Details
FDP8870 Description
The FDP8870 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
FDP8870 Features
High performance trench technology for extremely low rDS(ON)