IRFH5220TR2PBF

new-10%

Manufacturer part number:IRFH5220TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 3.8A PQFN

Case Package:SOT-23

Datasheet:IRFH5220TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-VQFN Exposed Pad
Number of Pins	8
Supplier Device Package	PQFN (5x6)
Packaging	Cut Tape (CT)
Published	2010
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	99.9MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.6W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	3.6W
Turn On Delay Time	7.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	99.9mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1380pF @ 50V
Current - Continuous Drain (Id) @ 25°C	3.8A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	4.7ns
Drain to Source Voltage (Vdss)	200V
Fall Time (Typ)	3.4 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	3.8A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	1.38nF
Recovery Time	59 ns
Drain to Source Resistance	99.9mOhm
Rds On Max	99.9 mΩ
Nominal Vgs	5 V
Height	850μm
Length	6mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free