IRFH5220TRPBF

new-10%

Manufacturer part number:IRFH5220TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 3.8A PQFN

Case Package:SOT-23

Datasheet:IRFH5220TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-VQFN Exposed Pad
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	R-PDSO-N5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.6W Ta 8.3W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.6W
Case Connection	DRAIN
Turn On Delay Time	7.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	99.9m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1380pF @ 50V
Current - Continuous Drain (Id) @ 25°C	3.8A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	4.7ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	3.4 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	3.8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	20A
Drain-source On Resistance-Max	0.0999Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	47A
Avalanche Energy Rating (Eas)	290 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant