IRFH5304TR2PBF

new-10%

Manufacturer part number:IRFH5304TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 22A 8VQFN

Case Package:SOT-23

Datasheet:IRFH5304TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Supplier Device Package	8-PQFN (5x6)
Packaging	Cut Tape (CT)
Published	2010
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.6W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	46W
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.5mOhm @ 47A, 10V
Vgs(th) (Max) @ Id	2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	2360pF @ 10V
Current - Continuous Drain (Id) @ 25°C	22A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	6.6 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	79A
Threshold Voltage	2.35V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	1.65nF
Recovery Time	29 ns
Drain to Source Resistance	4.5mOhm
Rds On Max	4 mΩ
Nominal Vgs	2.35 V
Height	810μm
Length	5mm
Width	5.0038mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant