SI7455DP-T1-GE3

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Manufacturer part number:SI7455DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 80V 28A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7455DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Resistance	25mOhm
Terminal Finish	PURE MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-C5
Number of Elements	1
Power Dissipation-Max	5.2W Ta 83.3W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	25m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5160pF @ 40V
Current - Continuous Drain (Id) @ 25°C	28A Tc
Gate Charge (Qg) (Max) @ Vgs	155nC @ 10V
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	28A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-80V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	101 mJ
RoHS Status	ROHS3 Compliant