IRFH5306TR2PBF

new-10%

Manufacturer part number:IRFH5306TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 15A 5X6 PQFN

Case Package:SOT-23

Datasheet:IRFH5306TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Supplier Device Package	PQFN (5x6) Single Die
Packaging	Cut Tape (CT)
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	8.1MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.6W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	3.6W
Turn On Delay Time	9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1125pF @ 15V
Current - Continuous Drain (Id) @ 25°C	15A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Rise Time	26ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	6.1 ns
Turn-Off Delay Time	9.1 ns
Continuous Drain Current (ID)	44A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	1.125nF
Recovery Time	26 ns
Drain to Source Resistance	8.1mOhm
Rds On Max	8.1 mΩ
Nominal Vgs	1.8 V
Height	900μm
Length	6mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free