IRFH7084TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFH7084TRPBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Series
HEXFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Channels
1
Power Dissipation-Max
156W Tc
Element Configuration
Single
Turn On Delay Time
16 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.25m Ω @ 100A, 10V
Vgs(th) (Max) @ Id
3.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
6560pF @ 25V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
190nC @ 10V
Rise Time
31ns
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
34 ns
Turn-Off Delay Time
64 ns
Continuous Drain Current (ID)
100A
Threshold Voltage
3.9V
Gate to Source Voltage (Vgs)
20V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.225021
$1.225021
10
$1.155680
$11.5568
100
$1.090264
$109.0264
500
$1.028551
$514.2755
1000
$0.970331
$970.331
IRFH7084TRPBF Product Details
IRFH7084TRPBF Description
The IRFH7084TRPBF is a HEXFET? single N-channel Power MOSFET offering improved gate, avalanche, and dynamic dV/dt ruggedness. The Infineon IRFH7084TRPBF is suitable for half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-DC converters, and DC-to-AC inverters. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor IRFH7084TRPBF is in the PQFN-8 package with 156W power dissipation.
IRFH7084TRPBF Features
Industry-standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation