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IRFH7914TR2PBF

IRFH7914TR2PBF

IRFH7914TR2PBF

Infineon Technologies

MOSFET N-CH 30V 15A PQFN56

SOT-23

IRFH7914TR2PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)
Packaging Cut Tape (CT)
Published 2008
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 8.7MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.1W
Technology MOSFET (Metal Oxide)
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 15V
Current - Continuous Drain (Id) @ 25°C 15A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 11ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.16nF
Recovery Time 21 ns
Drain to Source Resistance 8.7mOhm
Rds On Max 8.7 mΩ
Nominal Vgs 1.8 V
Height 950μm
Length 5.2324mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.800098 $4.800098
10 $4.528394 $45.28394
100 $4.272069 $427.2069
500 $4.030255 $2015.1275
1000 $3.802127 $3802.127

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