IRFH8330TR2PBF

new-10%

Manufacturer part number:IRFH8330TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 14A 5X6 PQFN

Case Package:SOT-23

Datasheet:IRFH8330TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Supplier Device Package	PQFN (5x6)
Packaging	Cut Tape (CT)
Published	2012
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Resistance	6.6MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.3W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	3.3W
Turn On Delay Time	9.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	5.7 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	17A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	1.45nF
Recovery Time	21 ns
Drain to Source Resistance	6.6mOhm
Rds On Max	6.6 mΩ
Nominal Vgs	1.8 V
Height	1.17mm
Length	5.85mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free