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SI7476DP-T1-E3

SI7476DP-T1-E3

SI7476DP-T1-E3

Vishay Siliconix

MOSFET N-CH 40V 15A PPAK SO-8

SOT-23

SI7476DP-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Supplier Device Package PowerPAK® SO-8
Weight 506.605978mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 5.3mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Turn On Delay Time 30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 15A Ta
Gate Charge (Qg) (Max) @ Vgs 177nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 20V
Drain to Source Resistance 5.3mOhm
Rds On Max 5.3 mΩ
Nominal Vgs 1 V
Height 1.04mm
Length 4.9mm
Width 5.89mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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