IRFHM4231TRPBF

new-10%

Manufacturer part number:IRFHM4231TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 40A PQFN

Case Package:SOT-23

Datasheet:IRFHM4231TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Base Part Number	IRFHM4231
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Power Dissipation-Max	2.7W Ta 29W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	8.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.1V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds	1270pF @ 13V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	28ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5.9 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	22A
Threshold Voltage	1.6V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0046Ohm
DS Breakdown Voltage-Min	25V
Avalanche Energy Rating (Eas)	42 mJ
Height	900μm
Length	3.3mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free