3N163-E3

new-10%

Manufacturer part number:3N163-E3

Manufacturer:Vishay Siliconix

Description:VISHAY 3N163-E3. P CHANNEL MOSFET, -40V, 50mA, TO-206AF

Case Package:SOT-23

Datasheet:3N163-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Number of Pins	4
Supplier Device Package	TO-72
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	250Ohm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	375mW Ta
Element Configuration	Single
Power Dissipation	375mW
Turn On Delay Time	5 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	250Ohm @ 100μA, 20V
Vgs(th) (Max) @ Id	5V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds	3.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C	50mA Ta
Rise Time	13ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs (Max)	±30V
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	-50mA
Threshold Voltage	-2.5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	-40V
Input Capacitance	3.5pF
Drain to Source Resistance	250Ohm
Rds On Max	250 Ω
Nominal Vgs	-2.5 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free