IRFHS8342TR2PBF

new-10%

Manufacturer part number:IRFHS8342TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 8.8A PQFN

Case Package:SOT-23

Datasheet:IRFHS8342TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-PowerVDFN
Number of Pins	6
Supplier Device Package	PG-TSDSON-6
Packaging	Digi-Reel®
Published	2010
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.1W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	2.1W
Turn On Delay Time	5.9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8.8A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs	8.7nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	5.2 ns
Continuous Drain Current (ID)	8.8A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	600pF
Recovery Time	17 ns
Drain to Source Resistance	16mOhm
Rds On Max	16 mΩ
Nominal Vgs	1.8 V
Height	950μm
Length	2.1mm
Width	2.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant