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NTP8G202NG

NTP8G202NG

NTP8G202NG

Rochester Electronics, LLC

POWER, N-CHANNEL, MOSFET

SOT-23

NTP8G202NG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology GaNFET (Gallium Nitride)
Power Dissipation-Max 65W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 350mOhm @ 5.5A, 8V
Vgs(th) (Max) @ Id 2.6V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 400V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 4.5V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 8V
Vgs (Max) ±18V
RoHS Status ROHS3 Compliant

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