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IRFI1010NPBF

IRFI1010NPBF

IRFI1010NPBF

Infineon Technologies

IRFI1010NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFI1010NPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 12mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 49A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 58W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 47W
Case Connection ISOLATED
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 49A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 66ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 49A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 44A
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 290A
Height 9.8mm
Length 10.6172mm
Width 4.826mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.02000 $2.02
10 $1.82100 $18.21
100 $1.46350 $146.35
500 $1.13826 $569.13
1,000 $0.94312 $0.94312
IRFI1010NPBF Product Details

IRFI1010NPBF Overview


A device's maximal input capacitance is 2900pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device conducts a continuous drain current (ID) of 49A, which is the maximum continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As shown in the table below, the drain current of this device is 44A.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 290A, which is its maximum rated peak drain current.Turn-on delay time is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFI1010NPBF Features


a continuous drain current (ID) of 49A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 290A.
a threshold voltage of 4V

IRFI1010NPBF Applications


There are a lot of Infineon Technologies IRFI1010NPBF applications of single MOSFETs transistors.

  • Synchronous Rectification
  • PFC stages, hard switching PWM stages and resonant switching
  • AC-DC Power Supply
  • Industrial Power Supplies
  • LCD/LED/ PDP TV Lighting
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor control
  • Uninterruptible Power Supply
  • Lighting, Server, Telecom and UPS.
  • Motor drives and Uninterruptible Power Supplies

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