IRFI1010NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFI1010NPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1997
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
12mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
49A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
58W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
47W
Case Connection
ISOLATED
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12m Ω @ 26A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
49A Tc
Gate Charge (Qg) (Max) @ Vgs
130nC @ 10V
Rise Time
66ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
46 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
49A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
44A
Drain to Source Breakdown Voltage
55V
Pulsed Drain Current-Max (IDM)
290A
Height
9.8mm
Length
10.6172mm
Width
4.826mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.02000
$2.02
10
$1.82100
$18.21
100
$1.46350
$146.35
500
$1.13826
$569.13
IRFI1010NPBF Product Details
IRFI1010NPBF Overview
A device's maximal input capacitance is 2900pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device conducts a continuous drain current (ID) of 49A, which is the maximum continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As shown in the table below, the drain current of this device is 44A.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 290A, which is its maximum rated peak drain current.Turn-on delay time is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFI1010NPBF Features
a continuous drain current (ID) of 49A a drain-to-source breakdown voltage of 55V voltage the turn-off delay time is 40 ns based on its rated peak drain current 290A. a threshold voltage of 4V
IRFI1010NPBF Applications
There are a lot of Infineon Technologies IRFI1010NPBF applications of single MOSFETs transistors.
Synchronous Rectification
PFC stages, hard switching PWM stages and resonant switching
AC-DC Power Supply
Industrial Power Supplies
LCD/LED/ PDP TV Lighting
Synchronous Rectification for ATX 1 Server I Telecom PSU