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IRFI530N

IRFI530N

IRFI530N

Infineon Technologies

IRFI530N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFI530N Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1998
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 41W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.11Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 150 mJ
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
350 $7.48000 $2618
IRFI530N Product Details

IRFI530N Description


The IRFI530N is a HEXFET? fifth-generation N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. The package eliminates the need for additional insulating hardware. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100-micron mica barrier. The package is mounted to a heat sink using a single clip or by a single screw fixing.



IRFI530N Features


  • Advanced process technology

  • Isolated package

  • Fully avalanche rating

  • Low static drain-to-source ON-resistance

  • Dynamic dV/dt rating

  • 2.5kVRMS High voltage isolation



IRFI530N Applications


  • Commercial

  • Industrial

  • Power Management

  • Induction furnaces

  • Arc furnaces and arc welders

  • Steel rolling mills

  • Large motors with periodic loading

  • Thyristor drives


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