FQI2N80TU

new-10%

Manufacturer part number:FQI2N80TU

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 800V 2.4A I2PAK

Case Package:SOT-23

Datasheet:FQI2N80TU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package	I2PAK
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Current Rating	2.4A
Power Dissipation-Max	3.13W Ta 85W Tc
Element Configuration	Single
Power Dissipation	3.13W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.4A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	30ns
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	2.4A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	800V
Input Capacitance	550pF
Drain to Source Resistance	4.9Ohm
Rds On Max	6.3 Ω
RoHS Status	RoHS Compliant
Lead Free	Lead Free